s mhop microelectronics c orp. a STT04N20 symbol v ds v gs i dm a i d units parameter 200 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) ( ) max 200v 1a 2.0 @ vgs=4.5v 1.8 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. surface mount package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a ver 1.0 www.samhop.com.tw nov,01,2012 1 details are subject to change without notice. w p d c -55 to 150 t a =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t a =70 c a t a =70 c w a a 1 6.6 3 green product 0.8 1.9 g d s g s 42 c/w thermal characteristics thermal resistance, junction-to-ambient r ja a t a =25 c stt series sot - 223
symbol min typ max units bv dss 200 v 1 i gss 100 na v gs(th) v 1.4 g fs s c iss 385 pf c oss 21 pf c rss 12 pf q g 8.3 nc 10 20 4.5 t d(on) 5.7 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =100v i d =0.5a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i d =0.5a v ds =10v , i d =0.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =160v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =0.5a 1.8 1.6 2.0 ohm c f=1.0mhz c STT04N20 ver 1.0 www.samhop.com.tw nov,01,2012 2 nc q gs nc q gd 0.9 1.2 gate-drain charge gate-source charge v ds =100v,i d =0.5a, v gs =10v drain-source diode characteristics and maximum ratings nc 3 v ds =100v,i d =0.5a,v gs =10v v ds =100v,i d =0.5a,v gs =4.5v v sd diode forward voltage v gs =0v,i s =0.5a 0.81 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ _ 11.82.5 7.5
STT04N20 ver 1.0 www.samhop.com.tw nov,01,2012 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) ( ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 4 3 2 0 0 2 4 6 8 10 12 v gs =10v 2.0 1.6 1.2 0.8 0.4 0 0 0.6 3.6 3.0 2.4 1.8 1.2 tj=125 c -55 c 25 c 4.8 4.0 3.2 2.4 1.6 0.8 2.5 2.2 1.9 1.6 1.3 1.0 0 100 75 25 50 125 150 v gs =10v i d =0.5a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 1 v gs =10v v gs =3v v gs =2.5v 0.1 1 2 3 4 0 v gs =4.5v v gs =4.5v i d =0.5a 0 v gs =3.5v
STT04N20 ver 1.0 www.samhop.com.tw nov,01,2012 4 r ds(on) ( ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 110 100 0.1 1 10 100 vds=100v,id=0.5a vgs=10v td(on) tr td(off ) tf 0.1 1 10 100 0.1 0.01 10 2.0 1.5 1.0 10 0 125 c 75 c 25 c i d =0.5a 20.0 10.0 1.0 0 0.40 0.80 1.20 1.60 2.00 5.0 ciss coss crss 540 450 360 270 180 90 0 10 15 20 0 5 25 30 10 8 6 4 2 0 1 v ds =100v i d =0.5a 8 6 4 2 75 c 0.5 3.5 3.0 2.5 25 c 125 c 6 5 4 3 2 1 0 10 s 1s 100ms 1 0 ms 1 ms r d s (o n ) lim i t v gs =10v single pulse t c =25 c dc
STT04N20 www.samhop.com.tw nov,01,2012 5 ver 1.0 figure 13. normalized thermal transient impedance curve square wave pulse duration(sec) normalized transient thermal resistance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 100 1000 p dm t 1 t 2 1. r thja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a = p dm * r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 10 0.01 0.02 0.05 0.1 0.2 0.5 single pulse
ver 1.0 www.samhop.com.tw nov,01,2012 sot-223 e b g e e1 b 1 2 3 a b c c d b e1 0.10 m c b 0.10 m c b 0.10 m c b 0.080 c detail "a" c a2 a a1 detail "a" gauge plane seating plane c 0.25 l 1.50 1.60 0.76 2.84 6.70 4.60 0.81 6.30 bsc b1 b2 0.23 0.30 b 3.30 3.50 a1 2.30 a mom. min. 0.02 0.66 0.60 0.71 b3 2.90 3.00 g 2.95 7.00 0 min. max. dimensions millimeter 1.80 0.10 0.0008 1.70 0.0591 0.84 0.0260 0.79 0.0236 3.10 0.1142 3.05 0.1118 0.06 0.35 0.0090 bsc 7.30 0.2638 3.70 0.1300 0.0906 0.1811 0.0319 10 0 symbol c1 d c e1 l e1 e e 0.23 0.28 0.33 0.0090 a2 max. mom. dimensions inche 0.0709 0.0039 0.0630 0.0669 0.0300 0.0330 0.0280 0.0311 0.1181 0.1220 0.1161 0.1200 0.0020 0.1181 0.1378 0.2560 bsc 0.2760 0.2874 0.1378 0.1457 10 0.0110 0.0130 common bsc 6.50 6.70 0.2480 0.2638 c1 (c) b3 b2 section c-c c1 (c) b1 b section b-b 6 STT04N20
STT04N20 www.samhop.com.tw nov,01,2012 7 sot-223 tape and reel data sot-223 carrier tape sot-223 reel unit: @ package a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t unit: @ reel size ? 330 m n w w1 h k s g r v 2 0.5 10.6 2.0 2 0.5 ? 97.0 2 1.0 2.2 13.0 + 1.5 ? 13.0 + 0.5 - 0.2 8.0 2 0.1 6.83 2 0.1 1.88 2 0.1 7.42 2 0.1 1.50 + 0.25 1.60 + 0.1 12.0 + 0.3 - 0.1 1.75 2 0.1 5.50 2 0.5 4.00 2 0.1 2.00 2 0.05 p0 d0 d1 e e2 e1 p2 p1 k0 b0 a0 t 0.292 2 0.02 ver 1.0
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